Single electron-hole pair generation using dark-bright solitons conversion control

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dc.contributor.authorR. Jomtarak
dc.contributor.authorC. Teeka
dc.contributor.authorP.P. Yupapin
dc.contributor.authorJ. Ali
dc.contributor.correspondenceR. Jomtarak; Advanced Research Center for Photonics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand; email: rangsan_jom@dusit.ac.th
dc.date.accessioned2025-03-10T07:37:41Z
dc.date.available2025-03-10T07:37:41Z
dc.date.issued2010
dc.description.abstractRecently, the electron-hole pair generated in 1.06-_m separate-absorber-avalanche (multiplier) InP-based devices [1], SiGe/Si planar waveguides [2] fabricated with a Ge concentration ranging from 2% to 6% and different thicknesses ranging from 200 nm to 2 _m, generating electron-hole pairs with a 100 fs laser pulse emitted at 810 nm, and monitoring the free-carrier absorption transient with a c.w. probe beam at 1.55 _m, bipolar transistors [3], CMOS process [4], InAs-GaSb superlattice (SL) photodiodes [5], resonant microcavity [6], A cavity-QED using a single InAs quantum dot and a high-Q whispering gallery mode [7]. ©2010 IEEE.
dc.identifier.citation2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings
dc.identifier.doi10.1109/ESCINANO.2010.5700953
dc.identifier.isbn978-142448854-4
dc.identifier.scopus2-s2.0-79951791786
dc.identifier.urihttps://repository.dusit.ac.th//handle/123456789/5035
dc.languageEnglish
dc.rights.holderScopus
dc.titleSingle electron-hole pair generation using dark-bright solitons conversion control
dc.typeConference paper
mods.location.urlhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-79951791786&doi=10.1109%2fESCINANO.2010.5700953&partnerID=40&md5=1f333115527296c58ee3d7877b034a47
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