Single electron-hole pair generation using dark-bright solitons conversion control
Date
2010
ISBN
978-142448854-4
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Conference paper
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Journal Title
Single electron-hole pair generation using dark-bright solitons conversion control
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Abstract
Recently, the electron-hole pair generated in 1.06-_m separate-absorber-avalanche (multiplier) InP-based devices [1], SiGe/Si planar waveguides [2] fabricated with a Ge concentration ranging from 2% to 6% and different thicknesses ranging from 200 nm to 2 _m, generating electron-hole pairs with a 100 fs laser pulse emitted at 810 nm, and monitoring the free-carrier absorption transient with a c.w. probe beam at 1.55 _m, bipolar transistors [3], CMOS process [4], InAs-GaSb superlattice (SL) photodiodes [5], resonant microcavity [6], A cavity-QED using a single InAs quantum dot and a high-Q whispering gallery mode [7]. ©2010 IEEE.
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2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings