All-optical switches based-on GaAs/AlAs quantum dots vertical cavities

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dc.contributor.authorC. Teeka
dc.contributor.authorR. Jomtarak
dc.contributor.authorP. P. Yupapin
dc.contributor.correspondenceC. Teeka; Scientific Equipment Center, Faculty of Science and Technology, Suan Dusit Rajabhat University, Bangkok, 10700, Thailand; email: chat_tee@dusit.ac.th
dc.date.accessioned2025-03-10T07:37:40Z
dc.date.available2025-03-10T07:37:40Z
dc.date.issued2012
dc.description.abstractIn this paper, we present an all-optical switch based on self-assembled GaAs/AlAs quantum dots (QDs) within a vertical cavity. Two essential aspects of this novel device have been investigated, which includes the QD/cavity nonlinearity with appropriately designed mirrors and the intersubband carrier dynamics inside QDs. Verticalreflection- type switches have been investigated with an asymmetric cavity that consists of 12 periods of GaAs/Al0.8Ga0.2As for the front mirror and 25 periods for the back mirror. The thicknesses of the GaAs and AlGaAs layers are chosen to be 89 and 102 nm, respectively. To give a dot-in-a-well (DWELL) structure, 65nm dimension of Si was deposited within an 20nm AlAs QW. All-optical switching via the QD excited states has been achieved with a time constant down to 750 fs, wavelength tunability over 29.5 nm. These results demonstrate that QDs within a vertical cavity have great advantages to realize low-power consumption polarization-insensitive micrometer-sized switching devices for the future optical communication and signal processing systems. © 2010 Published by Elsevier Ltd.
dc.identifier.citationProcedia Engineering
dc.identifier.doi10.1016/j.proeng.2012.01.1294
dc.identifier.issn18777058
dc.identifier.scopus2-s2.0-84892609393
dc.identifier.urihttps://repository.dusit.ac.th//handle/123456789/4977
dc.languageEnglish
dc.publisherElsevier Ltd
dc.rightsAll Open Access; Gold Open Access
dc.rights.holderScopus
dc.subjectAll-optical switches
dc.subjectMultilayer
dc.subjectQuantum dots
dc.subjectVertical cavity
dc.titleAll-optical switches based-on GaAs/AlAs quantum dots vertical cavities
dc.typeConference paper
mods.location.urlhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84892609393&doi=10.1016%2fj.proeng.2012.01.1294&partnerID=40&md5=e5621ee49c8d234b78e57f87ce4f6540
oaire.citation.endPage467
oaire.citation.startPage461
oaire.citation.volume32
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