R. JomtarakC. TeekaP.P. YupapinJ. Ali2025-03-102025-03-1020102010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings978-142448854-410.1109/ESCINANO.2010.57009532-s2.0-79951791786https://repository.dusit.ac.th//handle/123456789/5035Recently, the electron-hole pair generated in 1.06-_m separate-absorber-avalanche (multiplier) InP-based devices [1], SiGe/Si planar waveguides [2] fabricated with a Ge concentration ranging from 2% to 6% and different thicknesses ranging from 200 nm to 2 _m, generating electron-hole pairs with a 100 fs laser pulse emitted at 810 nm, and monitoring the free-carrier absorption transient with a c.w. probe beam at 1.55 _m, bipolar transistors [3], CMOS process [4], InAs-GaSb superlattice (SL) photodiodes [5], resonant microcavity [6], A cavity-QED using a single InAs quantum dot and a high-Q whispering gallery mode [7]. ©2010 IEEE.Conference paperScopus